Simultaneous Read/Write Family
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We offer a complete line of memory devices incorporating Spansion™ Flash memory's patented Simultaneous Read/Write architecture. Key features include the following:
- Read while programming or erasing with no latency: Ability to perform read operations without interrupting program and erase operations.
- Advanced power management: Zero-power operation.
- Fast factory programming: Improves throughput when using standard programming equipment.
- Data Management Software availability: Facilitates EEPROM emulation, speeding design, integration, and time to market.
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Spansion Flash memories with Simultaneous Read/Write technology are the first hardware capable of reading data during program or erase operations. Our dual bank design divides the flash chip into two banks of memory sectors, each of which can perform operations independently of the other. By storing operating code in one bank and data in the other, there is no need to interrupt program or erase operations to read code. Designers can eliminate other memory devices such as EEPROMs and SRAMs, increasing reliability and lowering total system cost.
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