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S29GLxxxM Product Overview
S29GL256M, S29GL128M, S29GL064M, S29GL032M
256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit,
3.0 Volt-only Page Mode Flash Memory featuring
0.23 um MirrorBit process technology
General Description
The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 um MirrorBit technology. The S29GL256M is a 256 Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, organized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. De-pending on the model number, the devices have an 8-bit wide data bus only, 16- bit wide data bus only, or a 16-bit wide data bus that can also function as an 8- bit wide data bus by using the BYTE# input. The devices can be programmed ei-ther in the host system or in standard EPROM programmers.
Distinctive Characteristics
Architectural Advantages
- Single power supply operation
- 3 volt read, erase, and program operations
- Manufactured on 0.23 um MirrorBit process technology
- SecSi™ (Secured Silicon) Sector region
- 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
- May be programmed and locked at the factory or by the customer
- Flexible sector architecture
- 256Mb: 512 32 Kword (64 Kbyte) sectors
- 128Mb: 256 32 Kword (64 Kbyte) sectors
- 64Mb (uniform sector models): 128 32 Kword (64
Kbyte) sectors or 128 32 Kword sector
- 64Mb (boot sector models): 127 32Kword (64 Kbyte)
sectors + 8 4Kword (8Kbyte) boot sectors
- 32Mb (uniform sector models): 64 32 Kwords (64
Kbytes) sectors or 64 32 Kword sectors
- 32Mb (boot sector models): 63 32 Kword (64 Kbyte)
sectors + 8 4 Kword (8 Kbyte) boot sectors
- Compatibility with JEDEC standards
- Provides pinout and software compatibility for singlepower
supply flash, and superior inadvertent write
protection
- 100,000 erase cycle per sector typical
- 20-year data retention typical
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Performance Characteristics
- High perforrmance
- 90 ns access time (128Mb, 64Mb, 32Mb), 100 ns access time (256Mb)
- 4-word/8-byte page read buffer
- 16-word/32-byte write buffer
- 25 ns page read times (128Mb, 64Mb, 32Mb)
- 30 ns page read times (256Mb)
- 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
- Low power consumption (typical values at 3.0 V, 5 MHz)
- 15 mA typical active read current
- 50 mA typical erase/program current
- 1 µA typical standby mode current
- Package options (specific package options vary by
density)
- 40-pin TSOP/RTSOP
- 48-pin TSOP/RTSOP
- 56-pin TSOP/RTSOP
- 64-ball Fortified BGA
- 48-ball fine-pitch BGA
- 63-ball fine-pitch BGA
- 80-ball fine-pitch BGA
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Software Features
- Program Suspend & Resume: read other sectors before programming operation is completed
- Erase Suspend & Resume: read/program other sectors before an erase operation is completed
- Data# polling & toggle bits provide status
- CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash devices
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Hardware Features
- Sector Group Protection: hardware-level method of preventing write operations within a sector group
- Temporary Sector Unprotect: VID-level m ethod of charging code in locked sectors
- WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings
- Hardware reset input (RESET#) resets device
- Ready/Busy# output (RY/BY#) detects program or erase cycle completion
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